Design and process issues for silicon carbide power DiMOSFETS

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Ryu, S H ^a   Agarwal, A K ^a   Saks, N S ^a   Das, M K ^a   Lipkin, L A ^a   Singh, R ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); OPTIMIZATION; OXIDES; SILICON CARBIDE;

BURIED CHANNEL STRUCTURE; CHANNEL MOBILITY; CRITICAL FIELD; DOUBLE IMPLANTED MOSFETS;

MOSFET DEVICES;

EID: 0034878064     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High-voltage double-implanted power MOSFETs in 6H-SiC
2. Counter-doped MOSFET's of 4H-SiC
3. Nitridation of silicon dioxide films grown on 6H silicon carbide
4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
5. 2
6. Low interface state density oxides on p-type SiC