ArF lithography for printing 100 nm gates on low volume ASIC devices: CD budget issues related to various binary mask-making processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 166-178

  Trouiller, Y ^a   Fanget, G ^a   Miramond, C ^b   Rody, Y ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

193 nm lithography; ArF; Mask; Photolithography

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; ARGON; ELECTRON BEAMS; LIGHT TRANSMISSION; LIGHTING; MASKS; OPTICAL RESOLVING POWER; PRINTING;

BINARY MASKS;

PHOTOLITHOGRAPHY;

EID: 0035759055     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435715     Document Type: Article

References (3)

1. O. Toublan et al., SPIE 2000 vol 4000, 160-170.
2. S.M. Manfield et al., SPIE 2000 vol 4000, 63-77.
3. M.V. Plat et al, SPIE 2000 vol 4000, 206-215.