Preparation of Hg1-xCdxTe (0.1 ≤ × ≤ 0.5) epitaxial layers by two-stage evaporation-condensation-diffusion method

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 105-107

  Savitsky, V G ^a   Storchun, O P ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Ukraine)

Author keywords

ECD; Epitaxial layers; Vapour pressure

Indexed keywords

CONDENSATION; DIFFUSION; EVAPORATION; FILM GROWTH; FILM PREPARATION; MERCURY COMPOUNDS; MORPHOLOGY; SOLID SOLUTIONS; SURFACE STRUCTURE; VAPOR PRESSURE;

EPITAXIAL LAYER; LAYER GROWTH;

EPITAXIAL GROWTH;

EID: 0032048312     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00509-9     Document Type: Article

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