Non-cavitation tensile creep in Lu-doped silicon nitride

Journal of the European Ceramic Society

Volumn 22, Issue 14-15, 2002, Pages 2479-2487

  Lofaj, Frantisek ^a   Wiederhorn, Sheldon M ^b   Long, Gabrielle G ^b   Hockey, Bernard J ^b   Jemian, Pete R ^c   Browder, Lisa ^d   Andreason, Jonathan ^e   Täffner, Ulrike ^f  

^a INSTITUTE OF MATERIALS RESEARCH   (Slovakia)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d KNOX COLLEGE   (United States)

^e ILLINOIS STATE UNIVERSITY   (United States)

^f MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Cavity suppression; Lutetium; Silicon nitride; Solution precipitation; Tensile creep

Indexed keywords

ACTIVATION ENERGY; CAVITATION; GRAIN BOUNDARIES; LUTETIUM; PRECIPITATION (CHEMICAL); STRAIN; VISCOSITY; YTTERBIUM;

TENSILE CREEP;

SILICON NITRIDE;

CAVITATION DAMAGE; CREEP; LUTETIUM; SILICON NITRIDE;

EID: 0036389283     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(02)00106-1     Document Type: Article

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