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Volumn 84, Issue 10, 2001, Pages 2394-2400

Tensile Creep Behavior of a Gas-Pressure-Sintered Silicon Nitride Containing Silicon Carbide

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CHARACTERIZATION; CREEP TESTING; DILATOMETERS; GAGES; HIGH TEMPERATURE APPLICATIONS; LASER APPLICATIONS; SILICON CARBIDE; SINTERING; TENSILE STRESS;

EID: 0035497697     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb01020.x     Document Type: Article
Times cited : (9)

References (28)
  • 1
    • 0027147983 scopus 로고
    • Transient Creep Behaviour of Hot Isostatically Pressed Silicon Nitride
    • S. M. Wiederhorn, B. J. Hockey, D. C. Cranmer, and R. Yeckley. "Transient Creep Behaviour of Hot Isostatically Pressed Silicon Nitride," J. Mater. Sci. 28, 445-53 (1993).
    • (1993) J. Mater. Sci. , vol.28 , pp. 445-453
    • Wiederhorn, S.M.1    Hockey, B.J.2    Cranmer, D.C.3    Yeckley, R.4
  • 2
    • 0028404195 scopus 로고
    • Comparison of the Creep and Creep Rupture Performance of Two HlPed Silicon Nitride Ceramics
    • M. K. Ferber, M. G. Jenkins, T. A. Nolan, and R. L. Yeckley, "Comparison of the Creep and Creep Rupture Performance of Two HlPed Silicon Nitride Ceramics," J. Am. Ceram. Soc., 77, 657-65 (1994).
    • (1994) J. Am. Ceram. Soc. , vol.77 , pp. 657-665
    • Ferber, M.K.1    Jenkins, M.G.2    Nolan, T.A.3    Yeckley, R.L.4
  • 4
    • 0028442173 scopus 로고
    • Creep and Stress Rupture Behavior of an Advanced Silicon Nitride: Part II, Creep Rate Behavior
    • M. N. Menon, H. T. Fang, D. C. Wu, M. G. Jenkins, and M. K. Ferber, "Creep and Stress Rupture Behavior of an Advanced Silicon Nitride: Part II, Creep Rate Behavior," J. Am. Ceram. Soc., 77, 1228-34 (1994).
    • (1994) J. Am. Ceram. Soc. , vol.77 , pp. 1228-1234
    • Menon, M.N.1    Fang, H.T.2    Wu, D.C.3    Jenkins, M.G.4    Ferber, M.K.5
  • 5
    • 0028442227 scopus 로고
    • Creep and Stress Rupture Behavior of an Advanced Silicon Nitride: Part III, Stress Rupture and the Monkman-Grant Relationship
    • M. N. Menon, H. T. Fang, D. C. Wu, M. G. Jenkins, and M. K. Ferber, "Creep and Stress Rupture Behavior of an Advanced Silicon Nitride: Part III, Stress Rupture and the Monkman-Grant Relationship," J. Am. Ceram. Soc., 77, 1235-41 (1994).
    • (1994) J. Am. Ceram. Soc. , vol.77 , pp. 1235-1241
    • Menon, M.N.1    Fang, H.T.2    Wu, D.C.3    Jenkins, M.G.4    Ferber, M.K.5
  • 8
    • 0030086579 scopus 로고    scopus 로고
    • Tensile Specimens from Ceramic Components
    • J. D. French and S. M. Wiederhorn, "Tensile Specimens from Ceramic Components," J. Am. Ceram. Soc., 79, 550-52 (1996).
    • (1996) J. Am. Ceram. Soc. , vol.79 , pp. 550-552
    • French, J.D.1    Wiederhorn, S.M.2
  • 9
    • 0031122726 scopus 로고    scopus 로고
    • Interlaboratory Verification of Silicon Nitride Tensile Creep Properties
    • W. E. Luecke and S. M. Wiederhorn, "Interlaboratory Verification of Silicon Nitride Tensile Creep Properties," J. Am. Ceram. Soc., 80, 831-38 (1997).
    • (1997) J. Am. Ceram. Soc. , vol.80 , pp. 831-838
    • Luecke, W.E.1    Wiederhorn, S.M.2
  • 13
    • 0029251007 scopus 로고
    • Relation between Strength, Microstructure, and Grain-Bridging Characteristics in in Situ Reinforced Silicon Nitride
    • C. W. Li, S. C. Lui, and J. Goldacker, "Relation between Strength, Microstructure, and Grain-Bridging Characteristics in in Situ Reinforced Silicon Nitride," J. Am. Ceram. Soc., 78, 449-59 (1995).
    • (1995) J. Am. Ceram. Soc. , vol.78 , pp. 449-459
    • Li, C.W.1    Lui, S.C.2    Goldacker, J.3
  • 15
    • 4244212498 scopus 로고    scopus 로고
    • Creep Processes in the Advanced Silicon Nitride Ceramics
    • TransTech, Switzerland
    • F. Lofaj, A. Okada, Y. Ikeda, and H. Kawamoto, "Creep Processes in the Advanced Silicon Nitride Ceramics," Key Eng. Mater. (TransTech, Switzerland), 171-74, 747-54 (2000).
    • (2000) Key Eng. Mater. , pp. 171-174
    • Lofaj, F.1    Okada, A.2    Ikeda, Y.3    Kawamoto, H.4
  • 16
    • 0032071062 scopus 로고    scopus 로고
    • Silicon Nitride/Silicon Carbide Nanocomposite Materials: I. Fabrication and Mechanical Properties at Room Temperature
    • M. Herrmann, C. Schubert, A. Rendtel, and H. Huebner, "Silicon Nitride/Silicon Carbide Nanocomposite Materials: I. Fabrication and Mechanical Properties at Room Temperature," J. Am. Ceram. Soc., 81, 1095-108 (1998).
    • (1998) J. Am. Ceram. Soc. , vol.81 , pp. 1095-1108
    • Herrmann, M.1    Schubert, C.2    Rendtel, A.3    Huebner, H.4
  • 17
    • 0032074378 scopus 로고    scopus 로고
    • Silicon Nitride/Silicon Carbide Nanocomposite Materials: II, Hot Strength. Creep, and Oxidation Resistance
    • A. Rendtel, H. Huebner, M. Herrmann, and C. Schubert, "Silicon Nitride/Silicon Carbide Nanocomposite Materials: II, Hot Strength. Creep, and Oxidation Resistance," J. Am. Ceram. Soc., 81, 1109-20 (1998).
    • (1998) J. Am. Ceram. Soc. , vol.81 , pp. 1109-1120
    • Rendtel, A.1    Huebner, H.2    Herrmann, M.3    Schubert, C.4
  • 18
    • 0033666956 scopus 로고    scopus 로고
    • Creep Resistant Silicon Nitride Ceramics - Approaches of Microstructural Design
    • A. Rendtel and H. Huebner, "Creep Resistant Silicon Nitride Ceramics - Approaches of Microstructural Design," Ceram. Eng. Sci. Proc., 21 [4] 515-26 (2000).
    • (2000) Ceram. Eng. Sci. Proc. , vol.21 , Issue.4 , pp. 515-526
    • Rendtel, A.1    Huebner, H.2
  • 20
    • 0035241599 scopus 로고    scopus 로고
    • Misalignment-Induced Bending in Pin-Loaded Tensile-Creep Specimens
    • R. F. Krause Jr., S. M. Wiederhorn, and J. J. Kuebler, "Misalignment-Induced Bending in Pin-Loaded Tensile-Creep Specimens," J. Am. Ceram. Soc., 84, 145-52 (2001).
    • (2001) J. Am. Ceram. Soc. , vol.84 , pp. 145-152
    • Krause R.F., Jr.1    Wiederhorn, S.M.2    Kuebler, J.J.3
  • 22
    • 0030165875 scopus 로고    scopus 로고
    • Sources of Strain Measurement Error in Flag-Based Extensometry
    • W. E. Luecke and J. D. French, "Sources of Strain Measurement Error in Flag-Based Extensometry," J. Am. Ceram. Soc., 79, 1617-26 (1996).
    • (1996) J. Am. Ceram. Soc. , vol.79 , pp. 1617-1626
    • Luecke, W.E.1    French, J.D.2
  • 23
    • 0013307790 scopus 로고
    • An Equation to Represent Strain/Time Relationships during High-Temperature Creep
    • P. W. Davies, W. J. Evans, K. R. Williams, and B. Wilshire, "An Equation to Represent Strain/Time Relationships During High-Temperature Creep," Scr. Metall., 3, 671-74 (1969).
    • (1969) Scr. Metall. , vol.3 , pp. 671-674
    • Davies, P.W.1    Evans, W.J.2    Williams, K.R.3    Wilshire, B.4
  • 24
    • 0033204993 scopus 로고    scopus 로고
    • A New Model for Tensile Creep of Silicon Nitride
    • W. E. Luecke and S. M. Wiederhorn, "A New Model for Tensile Creep of Silicon Nitride," J. Am. Ceram. Soc., 82, 2769-78 (1999).
    • (1999) J. Am. Ceram. Soc. , vol.82 , pp. 2769-2778
    • Luecke, W.E.1    Wiederhorn, S.M.2
  • 25
    • 0001616990 scopus 로고
    • An Empirical Relationship between Rupture Life and Minimum Creep Rate in Creep-Rupture Tests
    • F. C. Monkman and N. J. Grant, "An Empirical Relationship between Rupture Life and Minimum Creep Rate in Creep-Rupture Tests," Proc. Am. Soc. Test. Mater., 56, 593-620 (1956).
    • (1956) Proc. Am. Soc. Test. Mater. , vol.56 , pp. 593-620
    • Monkman, F.C.1    Grant, N.J.2
  • 26
    • 0028553103 scopus 로고
    • Fracture Mechanism Maps: Their Applicability to Silicon Nitride
    • ASTM STP 1201. Edited by C. R. Brinkman and S. F. Duffy, American Society for Testing and Materials, Philadelphia, PA
    • S. M. Wiederhorn, G. D. Quinn, and R. Krause, "Fracture Mechanism Maps: Their Applicability to Silicon Nitride"; pp. 36-61 in Life Prediction Methodologies and Data for Ceramic Materials, ASTM STP 1201. Edited by C. R. Brinkman and S. F. Duffy, American Society for Testing and Materials, Philadelphia, PA, 1994.
    • (1994) Life Prediction Methodologies and Data for Ceramic Materials , pp. 36-61
    • Wiederhorn, S.M.1    Quinn, G.D.2    Krause, R.3
  • 27
    • 0346480848 scopus 로고    scopus 로고
    • Honeywell Technology Center, Morristown, NJ, private communication
    • C. W. Li, Honeywell Technology Center, Morristown, NJ, 2000; private communication.
    • (2000)
    • Li, C.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.