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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 1, 2002, Pages 165-169

Ordering and surface state reduction of GaAs (100) by low energy S+ bombardment

(3) Zhao, Q a Kwok, R W M a Lau, W M a

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; FERMI LEVEL; ION BEAMS; ION BOMBARDMENT; KINETIC ENERGY; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; PASSIVATION; SURFACE STRUCTURE; VACUUM APPLICATIONS;

SULFIDE; SURFACE STATE REDUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036162960 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1427888 Document Type: Article

Times cited : (7)

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