Temperature dependence of 1/f noise in Pd/n-GaAs Schottky barrier diode

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 411-413

  Singh, R ^a   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CURRENT NOISE; FORWARD BIAS; FREQUENCY DEPENDENCE; FREQUENCY RANGES; METAL SEMICONDUCTOR INTERFACE; NOISE MEASUREMENTS; NOISE SPECTRA; SCHOTTKY BARRIER HEIGHTS; SPACE CHARGE REGIONS; SPATIAL INHOMOGENEITIES; SPECTRAL POWER DENSITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION;

SCHOTTKY BARRIER DIODES;

EID: 0036139310     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421220     Document Type: Article

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