A reliability of different metal contacts with amorphous carbon

Microelectronics Reliability

Volumn 42, Issue 1, 2002, Pages 141-143

  Paul, S ^a,b   Clough, F J ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MIM DEVICES; RELIABILITY THEORY;

AMORPHOUS CARBON; METAL CONTACTS;

DIAMOND LIKE CARBON FILMS;

EID: 0036133353     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00133-0     Document Type: Article

References (10)

1. Schottky barrier formation on rf-plasma enhanced chemical vapour deposited hydrogenated amorphous carbon
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3. Metal/DLC/metal switches for active matrix flat panel displays - Current status and optimisation
4. Novel low-k dielectrics based on DLC materials
5. Substrate sensitivity of adhesion and material properties of RF-PECVD amorphous carbon
6. Fluorinated amorphous carbon films for low permittivity interlevel dielectrics
7. Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure
8. Focused ion beam process for formation of a metal/insulator/metal double tunnel junction
9. 4/Ar rf plasma