Control of stoichiometry dependent defects in low temperature GaAs

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 21-26

  Luysberg, M ^a   Sohn, H ^a   Prasad, A ^a   Fujioka, H ^a   Klockenbrink, R ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CORRELATION METHODS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; FIELD EFFECT SEMICONDUCTOR DEVICES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS;

ARSENIC ANTISITE CONCENTRATION; POINT DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030407612     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)