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Semiconductor Science and Technology

Volumn 16, Issue 6, 2001, Pages 497-501

The defect responsible for non-radiative recombination in GaAs materials

(2) Bourgoin, J C a De Angelis, N a

a SORBONNE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; DEFECTS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; VOLTAGE MEASUREMENT;

NON-RADIATIVE RECOMBINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035365069 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/6/315 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.