Investigations on Al/BaTiO3/GaN MFS structures

Materials Letters

Volumn 52, Issue 1-2, 2002, Pages 80-84

  Senthil Kumar, M ^a   Sumathi, R R ^a   Giridharan, N V ^a   Jayavel, R ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

Barium titanate; Gallium nitride; Metal ferroelectric semiconductor; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM; BARIUM TITANATE; CAPACITANCE MEASUREMENT; ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRIC MATERIALS; GALLIUM NITRIDE; PERMITTIVITY; POLARIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-FERROELECTRIC-SEMICONDUCTOR (MFS) STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036131492     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00370-6     Document Type: Article

References (11)