Programmable single-electron transistor logic for low-power intelligent Si LSI

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 206-207+460+195

  Uchida, Ken ^a   Koga, Junji ^a   Ohba, Ryuji ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; LSI CIRCUITS; NONVOLATILE STORAGE; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

SINGLE ELECTRON TRANSISTORS (SET);

TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

EID: 0036116430     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film
2. Room-temperature operation of multifunctional single-electron transistor logic
3. Scalability of SOI technology into 0.13 mm 1.2 V CMOS generation
4. Single-electron memory integrated circuit for giga-to-tera bit storage
5. Coulomb blockade effects in edge quantum wire SOI-MOSFETs