-
1
-
-
0031220944
-
Electrochemical etching of porous silicon sacrificial layers for micromachining applications
-
M. Navarre, J. M. López-Villegas, J. Samitier, J. R. Moratne, J. Bausells, and A. Merlos, "Electrochemical etching of porous silicon sacrificial layers for micromachining applications," J. Micromech. Microeng., vol. 7, pp. 131-132, 1997.
-
(1997)
J. Micromech. Microeng.
, vol.7
, pp. 131-132
-
-
Navarre, M.1
López-Villegas, J.M.2
Samitier, J.3
Moratne, J.R.4
Bausells, J.5
Merlos, A.6
-
2
-
-
0027568562
-
Using porous silicon as a sacrificial layer
-
P. Steiner, A. Richte, and W. Lang, "Using porous silicon as a sacrificial layer," J. Micromech. Microeng., vol. 3, pp. 32-36, 1993.
-
(1993)
J. Micromech. Microeng.
, vol.3
, pp. 32-36
-
-
Steiner, P.1
Richte, A.2
Lang, W.3
-
3
-
-
1542450697
-
The mechanical properties of porous silicon membranes
-
M. D. Drory, P. C. Searson, and L. Liu, "The mechanical properties of porous silicon membranes," J. Mat. Sci. Lett., vol. 10, pp. 81-82, 1990.
-
(1990)
J. Mat. Sci. Lett.
, vol.10
, pp. 81-82
-
-
Drory, M.D.1
Searson, P.C.2
Liu, L.3
-
4
-
-
0000525745
-
Porous silicon membranes
-
P. C. Searson, "Porous silicon membranes," Appl. Phys. Lett., vol. 59, no. 7, pp. 832-833, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.7
, pp. 832-833
-
-
Searson, P.C.1
-
5
-
-
0031099223
-
Porous silicon as the carrier matrix in microstructured enzyme reactors yielding high enzyme activities
-
J. Drott, K. Lindström, L. Rosengren, and T. Laurell, "Porous silicon as the carrier matrix in microstructured enzyme reactors yielding high enzyme activities," J. Micromech. Microeng., vol. 7, pp. 14-23, 1997.
-
(1997)
J. Micromech. Microeng.
, vol.7
, pp. 14-23
-
-
Drott, J.1
Lindström, K.2
Rosengren, L.3
Laurell, T.4
-
6
-
-
0030658621
-
Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors
-
Chicago, IL, June 16-19
-
P. Maccagnani, R. Angelucci, P. Pozzi, A. Poggi, L. Dori, G. C. Cardinali, and P. Negrini, "Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors," in Proc. Transducers '97, Chicago, IL, June 16-19, 1997, pp. 213-216.
-
(1997)
Proc. Transducers '97
, pp. 213-216
-
-
Maccagnani, P.1
Angelucci, R.2
Pozzi, P.3
Poggi, A.4
Dori, L.5
Cardinali, G.C.6
Negrini, P.7
-
7
-
-
0030120903
-
Metallization of porous silicon by chemical vapor infiltration and deposition
-
B. J. Aylett, I. S. Harding, L. G. Earwaker, K. Forcey, and T. Giaddui, "Metallization of porous silicon by chemical vapor infiltration and deposition," Thin Solid Films, vol. 276, pp. 253-256, 1996.
-
(1996)
Thin Solid Films
, vol.276
, pp. 253-256
-
-
Aylett, B.J.1
Harding, I.S.2
Earwaker, L.G.3
Forcey, K.4
Giaddui, T.5
-
8
-
-
0011951836
-
Porous silicon: Microstructure, optical properties and application to light emitting diodes
-
Z. C. Feng and R. Tsu, Eds. Singapore: World Scientific
-
Y. Kanemitsu, "Porous silicon: Microstructure, optical properties and application to light emitting diodes," in Porous Silicon, Z. C. Feng and R. Tsu, Eds. Singapore: World Scientific, 1994, pp. 363-392.
-
(1994)
Porous Silicon
, pp. 363-392
-
-
Kanemitsu, Y.1
-
9
-
-
84885757292
-
Electrolytic shaping of germanium and silicon
-
A. Uhlir, "Electrolytic shaping of germanium and silicon," Bell Syst. Tech. J., pp. 333-347, 1956.
-
(1956)
Bell Syst. Tech. J.
, pp. 333-347
-
-
Uhlir, A.1
-
10
-
-
49949134584
-
Anodic dissolution of silicon in hydrofluoric acid solutions
-
R. Memming and G. Schwandt, "Anodic dissolution of silicon in hydrofluoric acid solutions," Surf. Sci., vol. 4, pp. 109-124, 1966.
-
(1966)
Surf. Sci.
, vol.4
, pp. 109-124
-
-
Memming, R.1
Schwandt, G.2
-
11
-
-
0017454138
-
Formation and properties of porous silicon film
-
Y. Arita and Y. Sunohara, "Formation and properties of porous silicon film," J. Electrochem. Soc., vol. 124, no. 2, pp. 285-295, 1977.
-
(1977)
J. Electrochem. Soc.
, vol.124
, Issue.2
, pp. 285-295
-
-
Arita, Y.1
Sunohara, Y.2
-
12
-
-
0042254579
-
Formation and oxidation of porous silicon by anodic reaction
-
_, "Formation and oxidation of porous silicon by anodic reaction," J. Cryst. Growth, vol. 45, pp. 383-392, 1978.
-
(1978)
J. Cryst. Growth
, vol.45
, pp. 383-392
-
-
-
13
-
-
21544444504
-
An experimental and theoretical study of the formation and microstructure of porous silicon
-
M. I. J. Beale, J. D. Benjamin, M. J. Urem, N. G. Chew, and A. G. Cullis, "An experimental and theoretical study of the formation and microstructure of porous silicon," J. Cryst. Growth, vol. 73, pp. 622-636, 1985.
-
(1985)
J. Cryst. Growth
, vol.73
, pp. 622-636
-
-
Beale, M.I.J.1
Benjamin, J.D.2
Urem, M.J.3
Chew, N.G.4
Cullis, A.G.5
-
14
-
-
0040824328
-
Morphology of porous silicon layers, experimental studies and theoretical modeling
-
Z. C. Feng and R. Tsu, Eds. Singapore: World Scientific
-
V. P. Parkhutik, "Morphology of porous silicon layers, experimental studies and theoretical modeling," in Porous Silicon, Z. C. Feng and R. Tsu, Eds. Singapore: World Scientific, 1994, pp. 301-328.
-
(1994)
Porous Silicon
, pp. 301-328
-
-
Parkhutik, V.P.1
-
15
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, pp. 1046-1048, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 1046-1048
-
-
Canham, L.T.1
-
16
-
-
0008869786
-
Spectral and structural features of porous silicon prepared by chemical and electrochemical etching processes
-
S. D. Campbell, L. A. Jones, E. Nakamichi, F.-X. Wei, L. D. Zajchowski, and D. F. Thomas, "Spectral and structural features of porous silicon prepared by chemical and electrochemical etching processes," J. Vac. Sci. Technol. B. vol. 13, no. 3, pp. 1184-1189, 1995.
-
(1995)
J. Vac. Sci. Technol. B.
, vol.13
, Issue.3
, pp. 1184-1189
-
-
Campbell, S.D.1
Jones, L.A.2
Nakamichi, E.3
Wei, F.-X.4
Zajchowski, L.D.5
Thomas, D.F.6
-
17
-
-
0001753504
-
The structural and luminescence properties of porous silicon
-
A. G. Cullis, L. T. Canham, and D. J. Calcott, "The structural and luminescence properties of porous silicon," J. Appl. Phys., vol. 82, no. 3, pp. 909-965, 1997.
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.3
, pp. 909-965
-
-
Cullis, A.G.1
Canham, L.T.2
Calcott, D.J.3
-
18
-
-
0031147097
-
Intrinsic stress in porous silicon layers formed by anodization in HF solution
-
T. Unagami, "Intrinsic stress in porous silicon layers formed by anodization in HF solution," J. Electrochem. Soc., vol. 144, no. 5, pp. 1835-1838, 1997.
-
(1997)
J. Electrochem. Soc.
, vol.144
, Issue.5
, pp. 1835-1838
-
-
Unagami, T.1
-
19
-
-
0343374616
-
Strain in porous Si formed on a Si (100) substrate
-
G. Bai, K. H. Kim, and M.-A. Nicolet, "Strain in porous Si formed on a Si (100) substrate," Appl. Phys. Lett., vol. 57, no. 21, pp. 2247-2249, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.21
, pp. 2247-2249
-
-
Bai, G.1
Kim, K.H.2
Nicolet, M.-A.3
-
20
-
-
0031144956
-
Porous silicon bulk micromachining for thermally isolated membrane formation
-
Cs. Dücsö, É. Vázsonyi, M. Ádám, I. Szabó, I. Bársony, J. G. E. Gardeniers, and A. van den Berg, "Porous silicon bulk micromachining for thermally isolated membrane formation," Sens. Actuators B, vol. 60, no. 1-3, pp. 235-239, 1997.
-
(1997)
Sens. Actuators B
, vol.60
, Issue.1-3
, pp. 235-239
-
-
Dücsö, Cs.1
Vázsonyi, É.2
Ádám, M.3
Szabó, I.4
Bársony, I.5
Gardeniers, J.G.E.6
Van Den Berg, A.7
-
21
-
-
0024664764
-
Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution
-
X. G. Zhang, S. D. Collins, and R. L. Smith, "Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution," J. Electrochem. Soc., vol. 136, no. 5, pp. 1561-1565, 1989.
-
(1989)
J. Electrochem. Soc.
, vol.136
, Issue.5
, pp. 1561-1565
-
-
Zhang, X.G.1
Collins, S.D.2
Smith, R.L.3
-
22
-
-
0020781354
-
Pore size distribution in porous silicon studied by adsorption isotherms
-
G. Bomchil, R. Herino, K. Barla, and J. C. Pfister, "Pore size distribution in porous silicon studied by adsorption isotherms," J. Electrochem. Soc., vol. 130, no. 7, pp. 1611-1614, 1983.
-
(1983)
J. Electrochem. Soc.
, vol.130
, Issue.7
, pp. 1611-1614
-
-
Bomchil, G.1
Herino, R.2
Barla, K.3
Pfister, J.C.4
-
23
-
-
0023399388
-
Porosity and pore size distributions of porous silicon layers
-
R. Herino, G. Bomchil, K. Barla, C. Bertrand, and J. L. Ginoux, "Porosity and pore size distributions of porous silicon layers," J. Electrochem. Soc., vol. 134, no. 8, pp. 1994-2000, 1987.
-
(1987)
J. Electrochem. Soc.
, vol.134
, Issue.8
, pp. 1994-2000
-
-
Herino, R.1
Bomchil, G.2
Barla, K.3
Bertrand, C.4
Ginoux, J.L.5
-
24
-
-
51249176460
-
A theoretical model for the formation morphologies of porous silicon
-
R. L. Smith, S.-F. Chuang, and S. D. Collins, "A theoretical model for the formation morphologies of porous silicon," J. Electron. Materials, vol. 17, no. 6, pp. 533-541, 1988.
-
(1988)
J. Electron. Materials
, vol.17
, Issue.6
, pp. 533-541
-
-
Smith, R.L.1
Chuang, S.-F.2
Collins, S.D.3
-
25
-
-
0030122701
-
Thermal nitridation of p-type porous silicon in ammonia
-
V. Morazzani, J. L. Cantin, C. Ortega, B. Pajot, R. Rahbi, M. Rosenbauer, H. J. von Bardeleben, and E. Vazsonyi, "Thermal nitridation of p-type porous silicon in ammonia," Thin Solid Films, vol. 276, pp. 32-35, 1996.
-
(1996)
Thin Solid Films
, vol.276
, pp. 32-35
-
-
Morazzani, V.1
Cantin, J.L.2
Ortega, C.3
Pajot, B.4
Rahbi, R.5
Rosenbauer, M.6
Von Bardeleben, H.J.7
Vazsonyi, E.8
-
26
-
-
0030652082
-
Etching technology for chromatography microchannels
-
R. W. Tjerkstra, M. De Boer, E. Berenschot, J. G. E. Gardeniers, A. van den Berg, and M. C. Elwenspoek, "Etching technology for chromatography microchannels," Electrochem. Act., vol. 42, no. 20-22, pp. 3399-3406, 1997.
-
(1997)
Electrochem. Act.
, vol.42
, Issue.20-22
, pp. 3399-3406
-
-
Tjerkstra, R.W.1
De Boer, M.2
Berenschot, E.3
Gardeniers, J.G.E.4
Van Den Berg, A.5
Elwenspoek, M.C.6
-
27
-
-
0025414205
-
Porous silicon morphologies and formation mechanism
-
R. L. Smith, S. F. Chuang, and S. D. Collins, "Porous silicon morphologies and formation mechanism," Sens. Actuat., vol. A21-A23, pp. 825-829, 1990.
-
(1990)
Sens. Actuat.
, vol.A21-A23
, pp. 825-829
-
-
Smith, R.L.1
Chuang, S.F.2
Collins, S.D.3
-
28
-
-
0000685594
-
Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction
-
K. Barla, G. Bomchil, R. Herino, and J. C. Pfister, "Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction," J. Cryst. Growth, vol. 68, pp. 727-732, 1984.
-
(1984)
J. Cryst. Growth
, vol.68
, pp. 727-732
-
-
Barla, K.1
Bomchil, G.2
Herino, R.3
Pfister, J.C.4
-
29
-
-
0030672630
-
Etching technology for microchannels
-
Nagoya, Japan, Jan. 26-30
-
R. W. Tjerkstra, M. de Boer, E. Berenschot, J. G. E. Gardeniers, A. van den Berg, and M. C. Elwenspoek, "Etching technology for microchannels," in Proc. MEMS '97, Nagoya, Japan, Jan. 26-30,"i997. pp. 147-152.
-
(1997)
Proc. MEMS '97
, pp. 147-152
-
-
Tjerkstra, R.W.1
De Boer, M.2
Berenschot, E.3
Gardeniers, J.G.E.4
Van Den Berg, A.5
Elwenspoek, M.C.6
-
30
-
-
14344273532
-
Buried structure technology
-
submitted for publication
-
M. de Boer, R. W. Tjerkstra, J. G. E. Gardeniers, M. C. Elwenspoek, and A. van den Berg, "Buried structure technology," J. Microelectromech. Syst., submitted for publication.
-
J. Microelectromech. Syst.
-
-
De Boer, M.1
Tjerkstra, R.W.2
Gardeniers, J.G.E.3
Elwenspoek, M.C.4
Van Den Berg, A.5
-
32
-
-
0000131627
-
Reliability and reproducability of mercury intrusion porosimetry
-
G. de With and H. J. Glass, "Reliability and reproducability of mercury intrusion porosimetry," J. European Ceramic Soc., vol. 17, pp. 753-757, 1997.
-
(1997)
J. European Ceramic Soc.
, vol.17
, pp. 753-757
-
-
De With, G.1
Glass, H.J.2
-
33
-
-
0004076516
-
-
VHC Verlagsgesellshaft mbH: Weinheim
-
S. Amelintkx, D. van Dyck, J. van Landuyt, and G. van Tendeloo, Eds., "Electron microscopy: principles and fundamentals," in VHC Verlagsgesellshaft mbH: Weinheim, 1997, pp. 5-6.
-
(1997)
Electron Microscopy: Principles and Fundamentals
, pp. 5-6
-
-
Amelintkx, S.1
Van Dyck, D.2
Van Landuyt, J.3
Van Tendeloo, G.4
-
34
-
-
33644910106
-
Porous silicon formation mechanisms
-
R. L. Smith and S. D. Collins, "Porous silicon formation mechanisms," J. Appl. Phys., vol. 71, no. 8, pp. R1-R22, 1992.
-
(1992)
J. Appl. Phys.
, vol.71
, Issue.8
-
-
Smith, R.L.1
Collins, S.D.2
-
35
-
-
0030120741
-
Etching and electrochemistry of silicon in acidic bromide solutions
-
P. M. M. C. Bressers, M. Plakman, and J. J. Kelly, "Etching and electrochemistry of silicon in acidic bromide solutions," J. Electroanal. Chem., vol. 406, pp. 131-137, 1996.
-
(1996)
J. Electroanal. Chem.
, vol.406
, pp. 131-137
-
-
Bressers, P.M.M.C.1
Plakman, M.2
Kelly, J.J.3
-
36
-
-
0030104629
-
Crystalline silicon etching in quiescent concentrated aqueous HF solutions
-
G. Willeke and K. Kellermann, "Crystalline silicon etching in quiescent concentrated aqueous HF solutions," Semicond. Sci. Technol., vol. 11, pp. 415-421, 1996.
-
(1996)
Semicond. Sci. Technol.
, vol.11
, pp. 415-421
-
-
Willeke, G.1
Kellermann, K.2
|