Gas damping model for a RF MEM switch and its dynamic characteristics

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1213-1216

  Veijola, Timo ^a   Tinttunen, Taisto ^a   Nieminen, Heikki ^b   Ermolov, Vladimir ^b   Ryhänen, Tapani ^b  

^a AALTO UNIVERSITY   (Finland)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DAMPING; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; NONLINEAR NETWORKS;

CAPACITIVE MICROELECTROMECHANICAL SWITCH; GAS DAMPING MODEL;

SEMICONDUCTOR SWITCHES;

EID: 0036069944     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011874     Document Type: Article

References (7)

1. Nonlinear circuit simulation of MEMS components: Controlled current source approach
2. Mechanical design and optimization of capacitive micromachined switch
3. Static equivalent circuit model for a capacitive MEMS RF switch
4. On the acoustic resistance due to viscous losses in air gap of electrostatic transducers
5. End effects of rare gas flow in short channels and in squeezed-film dampers
6. Modelling of nonlinear micromechanical resonators and their simulation with the harmonic balance method
7. APLAC - Object-oriented circuit simulator and design tool