X-ray topographic contrast of threading dislocations in silicon on insulator structures

Physica Status Solidi (A) Applied Research

Volumn 158, Issue 1, 1996, Pages 19-34

  Prieur, E ^a   Ohler, M ^a,b   Hartwig J ^a  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b Max Planck Arbeitsgruppe   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GEOMETRY; ION IMPLANTATION; MOIRE FRINGES; OXYGEN; SEMICONDUCTING SILICON; SEPARATION; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS; X RAY DIFFRACTION;

ANTIPARALLEL BURGERS VECTORS; DISLOCATION CONTRAST; SEPARATION BY IMPLANTED OXYGEN; THREADING DISLOCATIONS; TOPOGRAPHY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030290212     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211580104     Document Type: Article

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