Threading dislocations in silicon layer produced by separation by implanted oxygen process

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2113-2120

  Prieur, E ^a   Guilhalmenc, C ^b   Hartwig, J ^a   Ohler, M ^a,c   Garcia, A ^b   Aspar, B ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CEA LETI   (France)

^c Max Planck Arbeitsgruppe   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005732694     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363104     Document Type: Article

References (18)

1. K. Iznmi, in Proceedings of the Fourth International Symposium on SOI Technology and Devices, edited by D. N. Schmidt (Electrochemical Society, Penniagton, NJ, 1990), Vol. 90-6, p. 3.
2. A. J. Auberton-Herve and B. Aspar, in Proceedings of the Semiconductor East Conference (SEMI, Tokyo, 1994)
3. G. W. Cullen, M. T. Duffy, and A. C. Ipri, in Proceedings of the Sixth International Symposium on SOI Technology and Devices, edited by S. Cristoloveanu (Electrochemical Society, Pennigton, NJ, 1994), Vol. 94-11, p. 5.
4. C. Jaussaud, J. Margail, J. M. Lamure, and M. Bruel, Radiat. Eff. Defects Solids 127, 319 (1994).
5. J. Margail, Nucl, Instrum, Methods B 74, 41 (1993).
6. B. Aspar, Electron, Lett. (to be published).
7. D. Venables and K. S. Jones, Nucl. Instrum. Methods B 74, 65 (1993).
8. J. Stoemenos, A. Garcia, B. Aspar, and J. Margail, J. Electrochem. Soc. 143, 1248 (1995).
9. A. Garcia, Ph.D. thesis, l'Institute National Polytechnique de Grenoble, Grenoble, France, 1995.
10. E. Prieur, J. Härtwig, A. Garcia, M. Ohler, J. Baruchel, B. Aspar, and G. Ralland, J. Cryst. Growth (to be published).
11. F. Secco d'Aragona, J. Electrochem. Soc. 119, 948 (1972).
12. Characterization, of Crystal Growth Defects by X-Ray Methodes, edited by B. K. Tanner and D. K. Bowen (Plenum, New York, 1980).
13. R. Barrett, J. Baruchel, J. Härtwig, and F. Zontone, J. Phys. D 28, A250 (1995).
14. A. Garcia, B. Aspar, J. Margail, and C. Pudda, in Proceedings of the IEEESOI Conference (IEEE, Plam Springs, Califonia, 1993).
15. M. Ohler, E. Prieur, and J. Härtwig, J. Appl. Crystallogr. (to be published).
16. F. Shimura, Semiconductor silicon Crystal Technology (Academic, San Diego, 1989). pp. 69-71.
17. W. T. Read, Jr., Dislocarions in Crystal (MeGraw-Hill, New York, 1953). p. 128.
18. B. Aspar, C. Guithalmenc, C. Pudda, A. Garcia. A. M. Papon, A. J. Auberton-Herven, and J. M. Lamure, Microelectron Eng. 28, 411 (1995).