New analytical and broadband method for determining the HBT small-signal model parameters

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2000, Pages 1397-1400

  Bousnina, S ^a   Mandeville, P ^a   Kouki, A B ^a   Surridge, R ^a   Ghannouchi, F M ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM INDIUM PHOSPHIDE; INDUCTANCE; PARASITIC CAPACITANCE; PARASITIC RESISTANCE;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; INDUCTANCE MEASUREMENT; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033678326     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

1. Y. Gobert, P. J. Tasker. and K. H. Bachcm, "A physical, yet simple, small-signal equivalent circuit for the heterqjunction bipolar transistor," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 149-153, Jan. 1997.
2. D. Costa, W. Liu, and J. S. Harris, Jr., "Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit." IEEE Trans. Electron Devices, vol. 38, pp. 2018-2024. Sept. 1991.
3. D. R. Pehlke and D. Pavlidis. "Evaluation of the factors determining HBT high-frequency performance by direct analysis of s-paramclcr data." IEEE Trans. Microwave Theory Tech., vol. 40. pp. 2367-2373. Dec. 1992.
4. U. Schaper and B. Holzapfl. "Analytic parameter extraction of the HBT equivalent circuit with T-like topology from measured s-parameters." IEEE Trans. Microwave Theory Tech.. vol. 40. pp. 493-498. Mar. 1995.
5. C-J. Wei and J. C. M. Huang. "Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors, " IEEE Trans. Microwave Theory Tech.. vol. 43, pp. 2035-2039, Sept. 1995.
6. A. Samelis and D. Pavlidis. "DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization." IEEE Trans. Microwave Theory Tech., vol. 45, pp. 886-897. June 1997
7. B. Li, S. Prasad. L. Yang and S. C. Wang. "A semianalytical parameter-extraction procedure for HBT equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1427-1435. Oct. 1998.
8. R. Hajji, F. M Ghannouchi "Small-signal distributed model for GaAs HBT's and s-paramcler prediction at millimeter-wave frequencies" IEEE Trans. Electron Devices, vol. 44, pp. 723-73 1. May. 1997.