An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1761-1764

  Horng, T S ^a   Wu, J M ^a   Huang, H H ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT COLLECTORS; ELECTRIC IMPEDANCE; EMITTER COUPLED LOGIC CIRCUITS; EQUIVALENT CIRCUITS;

BASE EMITTER JUNCTIONS; EXTRINSIC INDUCTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035689535     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
2. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
3. A physical, yet simple small-signal equivalent circuit for the heterojunction bipolar transistor
4. Direct extraction of HBT equivalent-circuit elements
5. A new analytical and broadband method for determining the HBT small-signal model parameters
6. Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-π model