Ultra small InAs/GaInP/InP quantum dots

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 63-66

  Raz, T ^a   Ritter, D ^a   Bahir, G ^a   Gershoni, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036054144     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. 1-x dots on InP by metalorganic vapour phase epitaxy
2. Effect of matrix on InAs self-organized quantum dots on InP substrate
3. Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots
4. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized Islands in InP(001)
5. Effects of interface-layers composition and strain redistribution on the optical transitions of inas quantum dots on InP
6. Compact metalorganic molecular-beam epitaxy growth system
7. Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructurc field effect transistor application
8. 1-xP layers grown on InP substrates
9. Calculating the optical properties of multidimensional hcterostmctures: Application to the modeling of quaternary quantum well lasers
10. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots
11. X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices