Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2639-2643

  Cohen, G M ^a   Zisman, P ^a   Bahir, G ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000801259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590248     Document Type: Article

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