Large intersubband nonlinearity for all-optical switching at 1.72μm in Sb-based quantum wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4638, Issue , 2002, Pages 90-98

  Gopal, A V ^a   Yoshida, H ^a   Neogi, A ^a   Mozume, T ^a   Georgiev, N ^a   Simoyama, T ^a   Wada, O ^a   Ishikawa, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

All optic switch; Intersubband transitions; Nonlinearity; Relaxation time; Saturation intensity

Indexed keywords

CHARGE CARRIERS; ELECTRIC EXCITATION; LIGHT ABSORPTION; RELAXATION PROCESSES; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION SATURATION; CARRIER REDISTRIBUTION; CARRIER RELAXATION; FIGURE OF MERIT; INTERSUBBAND NONLINEARITY; LINE SHAPE ANALYSIS; PHOTON ABSORPTION; POWER DENSITY;

OPTICAL SWITCHES;

EID: 0036048273     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467468     Document Type: Conference Paper

References (20)

1. Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells
2. Feasibility study on ultrafast nonlinear optical properties of 1.55 μm intersubband transition in AlGaN/GaN quantum wells
3. Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ ∼1.75-4.2 μm
4. Feasibility of 1.55 μm intersubband photonic devices using InGaAs/AlAs psudomorphic quantum well structures
5. Ultrafast all-optical switching at 1.3 μm/1.55 μm using novel InGaAs/AlAsSb/InP coupled quantum well structure for intersubband transitions
6. (3) in coupled InGaAs-AlGaAs multiple quantum wells
7. Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis
8. Nonlinearity and recovery time of 1.55μm intersubband absorption in InGaAs/AlAsSb coupled quantum wells
9. Effect of growth interruptions on the interfaces of IngaAs/AlAsSb superlattice
10. Photoluminescence study of exciton-optical phonon scattering in bulk GaAs quantum wells
11. Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/AlAsSb quantum well structures
12. Femtosecond semiconductor-based optoelectronic devices for optical-communication systems
13. Picosecond all-optical switching in a Fabry-Perot cavity containing polydiacetylene
14. All-optical switching in long-period fiber gratings
15. Ultrafast all-optical gate with subpicosecond ON and OFF response time
16. Ultrafast modulation with subpicosecond recovery time in a GaAs/AlGaAs nonlinear directional coupler
17. Absorption saturation of intersubband transition in AlGaN/GaN multiple quantum wells
18. Ultrafast high-contrast all-optical switching using spin polarization in low-temperature-grown multiple quantum wells
19. Fast response time in optical nonlinearity of MBE-grown GaAs/AlAs MQW at around n=2 level