Polar diagram of wet-etched (100) InP

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 229-231

  Elias P ^a   Kostic I ^a   Hasenohrl S ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL ORIENTATION; CRYSTALS; DATA ACQUISITION; ETCHING; HYDROCHLORIC ACID;

POLAR DIAGRAMS; WET ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036047875     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Sacrificial etching of III-V compounds for micromechanical devices
2. InP-based MOEMS and related topics
3. Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching
4. OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets
5. Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCl solution