Dependence of the DQE of photoconductive X-ray detectors on charge transport and trapping

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4682, Issue , 2002, Pages 42-52

  Kabir, M Zahangir ^a   Kasap, S O ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

Charge collection; Charge transport and trapping; DQE; Flat panel sensor; X ray photoconductor

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; IMAGE SENSORS; IMAGING SYSTEMS; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; THICKNESS CONTROL; VOLTAGE CONTROL; X RAYS;

FLAT PANEL SENSORS; X-RAY PHOTOCONDUCTORS;

PHOTODETECTORS;

EID: 0036035098     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.465590     Document Type: Conference Paper

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