Microreflectance inspection of diode laser front facets

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4648, Issue , 2002, Pages 48-54

  Dorfel F ^a   Nerreter, S ^a   Tomm, J W ^a   Grunwald, R ^a   Kunkel, R ^b   Luft, J ^c  

^a MAX BORN INSTITUT   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Diode laser front facet; Reflectance measurement

Indexed keywords

CARRIER CONCENTRATION; LIGHT REFLECTION; OPTICAL WAVEGUIDES; PHOTOCURRENTS; PHOTOSENSITIVITY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MICROREFLECTANCE;

SEMICONDUCTOR LASERS;

EID: 0036030579     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.462659     Document Type: Article

References (18)

1. E. Yablonovitch, C.J. Sandroff, R. Bhat, and T. Gmitter "Nearly ideal electronic properties of sulfide coated GaAs surfaces" Appl. Phys. Lett. 51, 439-441 (1987).
2. T. Scimeca, Y. Watanabe, F. Maeda, R. Berrigan and M. Oshima "Controlled passivation of GaAs by Se treatment" Appl. Phys. Lett. 62, 1667-1669 (1993).
3. K. Asai, T. Miyashita, K.Ishigure and S. Fukatsu "Electronic passivation of GaAs surfaces by electrodeposition of organic molecules containing reactive sulfur" J. Appl. Phys. 77, 1582-1586 (1995).
4. N.C. Frateschi, M.Y. Jow, P.D. Dapkus and A.F.J. Levi "InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy" Appl. Phys. Lett. 65, 1748-1750 (1994).
5. K. Vaccaro, H.M. Dauplaise, A. Davis, S.M. Spaziani and J.P. Lorenzo "Indium phosphide passivation using thin layers of cadmium sulfide" Appl. Phys. Lett. 67, 527-529 (1995).
6. L.W. Tu, E.F. Schubert, M. Hong and G.J. Zydzik "In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric" J. Appl. Phys. 80, 6448-6451 (1996).
7. G. Beister, J. Maege, D. Gutsche, G. Erbert, J. Sebastian, K. Vogel, M. Weyers and O.P. Daga "Simple method for examining sulphur passivation of facets in InGaAs-AlGaAs (λ=0.98 μm) laser diodes" Appl. Phys. Lett. 68, 2467-2468 (1996).
8. Oosenbrug, Ch.S. Harder, A. Jakubowicz and P. Roentgen "Power integrity of 980nm pump lasers at 200 mW and above" Proc. LEOS Conference 348-349 (1996).
9. T. Higashi, S. Ogita, H. Soda, H. Kobayashi, H. Kurakake, O. Aoki, and N. Okazaki "Optimum asymmetric mirror facet structures for High-efficiency semiconductor lasers" IEEE J. Quant. El. 29, 1918-1923 (1993).
10. Ch. Lienau, A. Richter, and J.W. Tomm "Near-Field Photocurrent Spectroscopy: A Novel Technique for Studying Defects and Aging in High-Power Semiconductor Lasers" Applied Physics A 64, 341-51 (1997).
11. V. Malyarchuck, J.W. Tomm, T. Günther, R. Müller, R. Kunkel, C. Lienau, and J. Luft "Large Optical Cavity waveguides for high-power diode laser applications" SPIE Proc. 4287 111-117 (2001).
12. R. Grunwald, S. Nerreter, J.W. Tomm, S. Schwirzke-Schaaf "Automated high-accuracy measuring system for specular micro-reflectivity" SPIE Proc. 4449 (2002).
13. J.W. Tomm, A. Bärwolff, U. Menzel, M. Voß, R. Puchert, and T. Elsaesser F.X. Daiminger, S. Heinemann and J. Luft "Monitoring of Aging Properties of AlGaAs High-Power Laser Arrays" J. Appl. Phys. 81, 2059-63 (1997).
14. J.W. Tomm, A. Bärwolff, T. Elsaesser, and J. Luft, "Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers" Appl. Phys. Lett. 77, 747-749 (2000).
15. J.W. Tomm, E. Thamm, A. Bärwolff, T. Elsaesser, J. Luft, M. Baeumler, S. Mueller, W. Jantz, I. Rechenberg, and G. Erbert "Facet Degradation of High-Power Diode Laser Arrays" Appl. Phys. A 70, 377-381 (2000).
16. 1-xAs" J. Appl. Phys. 60, 754-767 (1986).
17. cf. www.korth.de/material/a12o3.htm.
18. S. Tiwari, S.L. Wright "Material properties of p-type GaAs at large dopings" Appl. Phys. Lett. 56, 563-565 (1990).