High-power InAlGaAs laser diodes with high efficiency at 980 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3628, Issue , 1999, Pages 80-85

  Mikulla, M ^a   Schmitt, A ^a   Walther, M ^a   Kiefer, R ^a   Moritz, R ^a   Meuller, S ^a   Sah, R E ^a   Braunteins, J ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; OPTICAL FREQUENCY CONVERSION; OSCILLATORS (ELECTRONIC); PERFORMANCE; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY;

LASER DIODE BARS; RELIABILITY TESTS;

SEMICONDUCTOR LASERS;

EID: 0032679672     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.344542     Document Type: Conference Paper

References (12)