Carrier diffusion effect in tapered semiconductor-laser amplifier

IEEE Journal of Quantum Electronics

Volumn 34, Issue 7, 1998, Pages 1247-1256

  Lai, Jie Wei ^a   Lin, Ching Fuh ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Beam amplification; Carrier diffusion; Filamentation; Semiconductor laser amplifier; Thermal effect

Indexed keywords

AMPLIFICATION; DIFFUSION; HETEROJUNCTIONS; LASER BEAMS; LIGHT AMPLIFIERS; REFRACTIVE INDEX; THERMAL EFFECTS;

AMPLITUDE FLUCTUATIONS; CARRIER DIFFUSION; FILAMENTATION; SEMICONDUCTOR LASER AMPLIFIER; SEPARATE CONFINEMENT HETEROSTRUCTURE;

SEMICONDUCTOR LASERS;

EID: 0032123826     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.687869     Document Type: Article

References (35)

1. K. Y. Liou, U. Koren, E. C. Burrows, M. Oron, B. I. Miller, M. Young, G. Raybon, and C. A. Burrus, "Operation of integrated InGaAsP-InP optical amplifier-monitoring detector with feedback control circuit," IEEE Photon. Technol. Lett., vol. 2, pp. 878-880, 1990.
2. M. J. O'Mahony, "Semiconductor laser optical amplifier for use in future fiber system," J. Lightwave Technol., vol. 6, pp. 531-544, 1988.
3. G. P. Agrawal and N. A. Olsson, "Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers," IEEE J. Quantum Electrown., vol. 25, pp. 2297-2306, 1989.
4. K. T. Koai, R. Olshansky, and P. M. Hill, "Dual-function semiconductor laser amplifier in a broad-band subcarrier multiplexed system." IEEE Photon. Technol. Lett., vol. 2, pp. 926-928, 1990.
5. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers, 2nd ed. New York: Van Nostrand Reinhold, 1993.
6. D. Mehuys, D. F. Welch, R. Parke, R. G. Waarts, A. Hardy, and D. Scifres, "High power, diffraction-limited emission from monolithically integrated active grating master oscillator power amplifier," Electron. Lett., vol. 27, pp. 492-494, 1991.
7. S. O'Brien, D. Mehuys, D. F. Welch, R. Parke, R. J. Lang, and D. Scifres, "High-power diffraction limited monolithic broad area master oscillator power amplifier," IEEE Photon. Technol. Lett., vol. 5, pp. 526-528, 1993.
8. C. Zmudzinski, D. Botez, L. J. Mawst, A. Bhattacharya, M. Nesnidal, and R. F. Nabiev, "Three-core ARROW-type diode laser: Novel highpower, single-mode device, and effective master oscillator for flared antiguided MOPA's," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 129-137, 1995.
9. P. M. W. Skovgaard, J. G. McInerney, J. V. Moloney, R. A. Indik, and C. Z. Ning, "Enhanced stability of MFA-MOPA semiconductor lasers using a nonlinear, turmpet-shaped flare," IEEE Photon. Technol. Lett., vol. 9, pp. 1220-1222, 1997.
10. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, pp. 740-742, 1992.
11. S. O'Brien, A. Schoenfelder, and R. J. Lang. "5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm." IEEE Photon. Technol. Lett., vol. 9, pp. 1217-1219, 1997.
12. D. Mehuys, S. O'Brien, R. J. Lang, A. Hardy, D. F. Welch, "5 W, diffraction-limited, tapered-stripe unstable resonator semiconductor laser." Electron Lett., vol. 30, pp. 1855-1856, 1993.
13. L. Goldberg, D. Mehuys, M. R. Surette, and D. C. Hall, "High-power, near-diffraction large-area traveling-wave semiconductor amplifiers," IEEE J. Quantum Electron., vol. 29, pp. 2028-2043, 1993.
14. M. Tamburrini, L. Goldberg, and D. Mehuys, "Periodic filaments in reflective broad area semiconductor optical amplifiers," Appl. Phys. Lett., vol. 60, pp. 1292-1294, 1992.
15. R. J. Lang, D. Mehuys, A. Hardy, K. Dzurko, and D. F. Welch. "Spatial evolution of filaments in broad area diode laser amplifiers," Appl. Phys. Lett., vol. 60, pp. 1292-1294, 1992.
16. L. Goldberg, M. R. Surette, and D. Mehuys, "Filament formation in a tapered GaAlAs optical amplifier," Appl. Phys. Lett., vol. 62, pp. 2304-2306, 1993.
17. Z. Dai, R. Michalzik, P. Unger, and K. J. Ebeling, "Numerical simulation of broad-area high-power semiconductor laser amplifiers," IEEE J. Quantum Electrom., vol. 33, pp. 2240-2254, 1997.
18. J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron., vol. 28, pp. 623-645, 1996.
19. J. V. Moloney, R. A. Indik, and C. Z. Ning, "Full space-time sumulation for high-brightness semiconductor lasers," IEEE Photon. Technol. Lett., vol. 9. pp. 731-733, 1997.
20. C. Z. Ning, R. A. Indik, and J. V. Moloney. "Effective Bloch equations for semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 33, pp. 1543-1550, 1997.
21. J. R. Marciante and G. P. Agrawal, "Nonlinear mechanisms of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 32, pp. 590-596, 1996.
22. P. Chazan and J. D. Ralston, "Beam propagation model of tapered amplifier including nonlinear gain and diffusion," presented at Semiconductor Lasers: Advanced Devices and Application. Keystone, CO, 1995. paper TuC5.
23. R. J. Lang, A. Hardy, R. Parke, D. Mehuys, S. O'Brien, J. Major, and D. Welch, "Numerical analysis of flared semiconductor laser amplifiers," IEEE J. Quantum Electron., vol. 29, pp. 2044-2051, 1993.
24. S. Ramauujan and H. G. Winful, "Spontaneous emission induced filamentation in flared amplifier," IEEE J. Quantum Electron., vol. 32, pp. 784-789, 1996.
25. A. H. Paxton and G. C. Dente, "Filament formation in semiconductor laser gain regions," J. Appl. Phys., vol. 70, pp. 2921-2925, 1991.
26. W. B. Joyce, "Carrier transport in double-heterostructure active layers," J. Appl. Phys., vol. 53, pp. 7235-7239, 1982.
27. W. Huang, C. Xu, S. T. Chu, and S. K. Chaudhuri, "The finitedifference vector beam propagation method: Analysis and assessment," J. Lightwave Technol., vol. 10, pp. 295-305, 1992.
28. H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers. New York: Academic, 1976.
29. W. B. Joyce and R. W. Dixon, "Thermal resistance of heterostructure laser," J. Appl. Phys., vol. 46, pp. 855-863, 1975.
30. D. A. Neamen, Semiconductor Physics and Devices, IRWIN, 1992.
31. C.-F. Lin, "A new technique for monitoring etching depth in the fabrication of ridge-waveguide lasers," master's thesis, Cornell Univ., Ithaca, NY, 1989.
32. W. B. Joyce and R. W. Dixon, "Analytic approximation for the Fermi energy of an ideal Fermi gas," Appl. Phys. Lett., vol. 31, pp. 354-356, 1977.
33. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2008, 1992.
34. J Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi, "High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics," Appl. Phys. Lett., vol. 65, pp. 1004-1005, 1994.
35. T. Y. Na, Computational Methods in Engineering Boundary Value Problems. New York: Academic, 1979, p. 98.