Methods for comparing contact hole shrinking techniques with 248 nm single layer and bilayer photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 741-753

  Petrillo, Karen ^a   Simons, John ^a   DellaGuardia, Ronald ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DATA REDUCTION; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS;

CONTACT HOLE SHRINKING TECHNIQUES;

PHOTORESISTS;

EID: 0036029159     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474275     Document Type: Conference Paper

References (7)

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