Growth and electron field emission characteristics of nanodiamond films deposited in N2/CH4/H2 microwave plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1982-1986

  Wang, S G ^a   Zhang, Qing ^a   Yoon, S F ^a   Ahn, J ^a   Wang, Q ^a   Zhou, Q ^a   Yang, D J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; GROWTH (MATERIALS); MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOSPHORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE;

FIELD EMISSION PROPERTIES; LOW FIELD ELECTRON EMITTERS; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; NANODIAMOND FILMS;

DIAMOND FILMS;

EID: 0036026368     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1503780     Document Type: Article

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