Shallow junction formed by CoSi2 as a diffusion source with phosphorus add-ion implantation for 0.15-μm CMOS technology

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 619-623

  Jang, Myoung Jun ^a   Lee, Joo Hyoung ^a   Park, Young Jin ^a   Yoon, Hee Koo ^a   Lee, Hi Deok ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

COMS Technology; SADS; Salicide; Shallow junction

Indexed keywords

EID: 0036012682     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.619     Document Type: Conference Paper

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