Field electron emission device using silicon nanoprotrusions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 787-790

  Sawada, Kazuaki ^a   Tabe, Michiharu ^b   Ishikawa, Yasuhiko ^b   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON TUBES; ELECTRONS; ETCHING; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTOR DIODES; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

NANOPROTRUSIONS; SILICON NANOEMITTERS;

ELECTRON EMISSION;

EID: 0035998522     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1467661     Document Type: Conference Paper

References (11)