Field electron emission from silicon nanoprotrusions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 8 A, 2001, Pages

  Sawada, Kazuaki ^a,b   Tabe, Michiharu ^a,b   Ishikawa, Yasuhiko ^a,b   Iwatsuki, Makoto ^a,b   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Field emitter; LOCOS; Nanosilicon; Protrusion

Indexed keywords

ELECTRON EMISSION; ELECTRONICS PACKAGING; ETCHING; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; OXIDATION;

FIELD ELECTRON EMISSION; FIELD EMITTER; LOCAL OXIDATION OF SILICON; NANOSILICON; PROTRUSION; SILICON NANOPROTRUSION;

SEMICONDUCTING SILICON;

EID: 0035415788     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Letter

References (10)