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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1419-1426

Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

(2) Goldfarb, I a Briggs, G A D b

a TEL AVIV UNIVERSITY (Israel)

b UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; EPITAXIAL GROWTH; EVAPORATION; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SYNTHESIS (CHEMICAL);

COBALT GERMANIDE; COBALT SILICIDE; ELECTRON BEAM EVAPORATION; SOLID PHASE REACTIONS;

COBALT COMPOUNDS;

EID: 0035982797 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1491555 Document Type: Conference Paper

Times cited : (12)

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