Formation of InAs/GaAs quantum dots by dewetting during cooling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1489-1492

  Mirin, R P ^a   Roshko, A ^a   Van Der Puijl, M ^a   Norman, A G ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; PHASE TRANSITIONS; PYROMETRY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMOCOUPLES; WETTING;

DEWETTING; INDIUM ARSENIDE; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035982573     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1495094     Document Type: Conference Paper

References (10)