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Materials Science and Engineering: B

Volumn 86, Issue 2, 2001, Pages 157-164

Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers

(5) Longo, M a Parisini, A a Tarricone, L a Toni, L a Kudela R b

a UNIVERSITY OF PARMA (Italy)

b INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

Author keywords

Alloys; Doping; Substrate

Indexed keywords

CRYSTAL ORIENTATION; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

CONTINUOUS WAVE-PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0035949871 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00680-8 Document Type: Article

Times cited : (12)

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