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Volumn 10, Issue 4, 1997, Pages 38-42

Ordering in GaInP: Epitaxy, basic characteristics and device relevance

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

EID: 0031176617     PISSN: 09611290     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0961-1290(99)80029-5     Document Type: Note
Times cited : (6)

References (12)
  • 8
    • 0001699907 scopus 로고
    • Atomic Ordering and Phase Separation in Epitaxial III-V Alloys
    • ed. by S. Mahajan Elsevier Science, Amsterdam
    • A. Zunger and S. Mahajan, Atomic Ordering and Phase Separation in Epitaxial III-V Alloys, in: Handbook on Semiconductors, vol. 3, ed. by S. Mahajan (Elsevier Science, Amsterdam, 1994).
    • (1994) Handbook on Semiconductors , vol.3
    • Zunger, A.1    Mahajan, S.2
  • 11
    • 0347034757 scopus 로고    scopus 로고
    • Transmission electron microscopy observation of lateral order/ disorder structures in (Al)GaInP
    • M. Burkard, C. Geng, A. Mühe, F. Scholz, H. Schweizer and F. Phillipp, Transmission electron microscopy observation of lateral order/ disorder structures in (Al)GaInP, Appl. Phys. Lett. 70 (1997) 1290.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1290
    • Burkard, M.1    Geng, C.2    Mühe, A.3    Scholz, F.4    Schweizer, H.5    Phillipp, F.6
  • 12
    • 0006631705 scopus 로고    scopus 로고
    • Tunable polarization converter based on ordered AlGaInP waveguide structures
    • R. Wirth, A. Moritz, C. Geng, F. Scholz and A. Hangleiter, Tunable polarization converter based on ordered AlGaInP waveguide structures, Appl. Phys. Lett. 69 (1996) 2225.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2225
    • Wirth, R.1    Moritz, A.2    Geng, C.3    Scholz, F.4    Hangleiter, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.