Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE

Materials Chemistry and Physics

Volumn 66, Issue 2, 2000, Pages 246-252

  Attolini, G ^a   Bocchi, C ^a   Germini, F ^a   Pelosi, C ^a   Parisini, A ^b   Tarricone, L ^b   Kudela R ^c   Hasenohrl, S ^c  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; FLUID DYNAMICS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES;

GALLIUM PHOSPHIDE; LATTICE MATCHING;

INDIUM COMPOUNDS;

EID: 0034299765     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00319-9     Document Type: Article

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