High-gain p-i-n infrared photosensors with Bragg reflectors on amorphous silicon-germanium alloy

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 826-828

  Ho, Jyh Jier ^a   Fang, Y K ^a   Wu, Kuen Hsien ^a   Tsai, C S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMITTING DIODES; MIRRORS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON GERMANIUM ALLOYS; BRAGG REFLECTORS; INFRARED PHOTOSENSORS; OPTICAL GAIN;

OPTICAL SENSORS;

EID: 0031076431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119070     Document Type: Article

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