Effect of BCl3 dry etching on InAlN surface properties

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages

  Ren, F ^a,c   Lothian, J R ^a   Chen, Y K ^a   MacKenzie, J D ^b,c   Donovan, S M ^b   Vartuli, C B ^b   Abernathy, C R ^b,c   Lee, J W ^b   Pearton, S J ^b,c  

^a LUCENT TECHNOLOGIES   (United States)

^b University of Florida   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; EFFECTS; ELECTRIC DISCHARGES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MORPHOLOGY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE PROPERTIES;

ATOMIC NEUTRALS; DIMETHYLETHYLAMINE ALANE; DISRUPTION; METAL CONTACTS; METALLORGANIC MOLECULAR BEAM EPITAXY; NITROGEN BEAM; NITROGEN DEFICIENT SURFACES; RECTIFYING PROPERTIES; TRIETHYLINDIUM;

DRY ETCHING;

EID: 0030247838     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837092     Document Type: Article

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