Epitaxial growth of GaN/Pd/GaN sandwich structure

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 444-447

  Tanaka, Uitsu ^a   Maruyama, Takahiro ^a   Akimoto, Katsuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; MULTILAYERS; PALLADIUM; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; TENSILE STRESS; THERMAL EXPANSION; X RAY CRYSTALLOGRAPHY;

METAL BURIED EPITAXY; METAL BURIED SEMICONDUCTOR; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0032641865     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01372-4     Document Type: Article

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