MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 411-414

  Ebling, D G ^a   Rattunde, M ^a   Steinke, L ^a   Benz, K W ^a   Winnacker, A ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STOICHIOMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032683566     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01364-5     Document Type: Article

References (4)

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3. Le Vaillant Y.-M., Clur S., Andenet A., Briot O., Gil B., Aulombard R.L., Bisaro R., Olivier J., Durant O., Duboz J.-Y. Mat. Res. Symp. Proc. 468:1997;173.
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