Dependence of the residual strain in GaN on the AlN buffer layer annealing parameters

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 173-177

  Le Vaillant, Y M ^a   Clur, S ^a   Andenet, A ^a   Briot, O ^a   Gil, B ^a   Aulombard, R L ^a   Bisaro, R ^a   Olivier, J ^a   Durand, O ^a   Duboz, J Y ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

BUFFER LAYERS; LATTICE PARAMETER DETERMINATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030677977     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-173     Document Type: Conference Paper

References (10)