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Volumn 183, Issue 1-2, 1998, Pages 49-61
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Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL MICROSTRUCTURE;
CRYSTAL ORIENTATION;
CRYSTAL SYMMETRY;
FILM GROWTH;
NUCLEATION;
SEMICONDUCTING GALLIUM ARSENIDE;
STACKING FAULTS;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
VAPOR PHASE EPITAXY;
SEMICONDUCTING GALLIUM NITRIDE;
SEMICONDUCTING FILMS;
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EID: 0031702531
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00412-0 Document Type: Article |
Times cited : (6)
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References (14)
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