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Volumn 183, Issue 1-2, 1998, Pages 49-61

Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; FILM GROWTH; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

EID: 0031702531     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00412-0     Document Type: Article
Times cited : (6)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.