Effects of strain fields on excitons and phonons in wurtzite GaN epilayers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 745-756

  Gill, B ^a   Briot, O ^a   Aulombard, R L ^a   Demangeot, J F ^a   Frandon, J ^a   Renucci, M ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; STRAIN; THIN FILMS;

DEFORMATION POTENTIALS; GROUP THEORY ANALYSIS; REFLECTANCE SPECTROSCOPY; SPIN-ORBIT INTERACTIONS; STRAIN FIELDS; THIN EPILAYERS; WURTZITE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030716584     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)