Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 345-347

  Kuznetsov, N ^a   Tsagaraki, K ^b   Bauman, D ^c   Morozov, A ^c   Nikitina, I ^a   Ivantsov, V ^a,d   Zekentes, K ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c Crystal Growth Research Center   (Russian Federation)

^d TDI Inc ^*  (United States)

Author keywords

Liquid phase epitaxy; Silicon carbide; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; LIQUID PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SURFACE ROUGHNESS;

STEP FLOW GROWTH;

SEMICONDUCTING FILMS;

EID: 0035932327     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00662-0     Document Type: Article

References (10)