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Volumn 264-268, Issue PART 1, 1998, Pages 21-24

Step structures and structural defects in bulk SiC crystals grown by sublimation method

(4) Okamoto, A a Sugiyama, N a Tani, T a Kamiya, N a

Author keywords

Micropipe; Nitrogen Doping; Polarity; Polytype; Power Device; SiC Single Crystal; Step Structure; Subgrain Boundary; Sublimation Method

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GRAIN BOUNDARIES; NITROGEN; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBLIMATION;

ETCH PIT MEASUREMENT; MICROPIPES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031675506 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.21 Document Type: Article

Times cited : (15)

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