Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 218-221

  Georgakilas, A ^a   Tsagaraki, K ^a   Harteros, K ^a   Hatzopoulos, Z ^a   Vilà, Anna ^b   Becourt N ^b   Peiro, F ^b   Cornet, A ^b   Chrysanthakopoulos, N ^c   Calamiotou, M ^c  

^a UNIVERSITY OF CRETE   (Greece)

^b UNIVERSITY OF BARCELONA   (Spain)

^c UNIVERSITY OF ATHENS   (Greece)

Author keywords

Atomic force microscopy; InAlAs; Molecular beam epitaxy; X ray

Indexed keywords

CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SURFACE STEP BUNCHING;

SEMICONDUCTING FILMS;

EID: 0032310616     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01280-2     Document Type: Article

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