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Journal of Physics D: Applied Physics

Volumn 34, Issue 10, 2001, Pages 1461-1465

Deviation of the AlGaAs lattice constant from Vegard's law

(2) Zhou, D a Usher, B F a

a LA TROBE UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POISSON RATIO; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ETCHANTS;

ALUMINUM COMPOUNDS;

EID: 0035926642 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/34/10/304 Document Type: Article

Times cited : (55)

References (26)

1
- 36549100507
- (1987) J. Appl. Phys. , vol.62 , pp. 4154-4158
- Fewster, P.F.¹ Curling, C.J.²

2
- 0004839548
- (1987) J. Vac. Sci. Technol. B , vol.6 , pp. 758-762
- Xiong, F.¹ Tombrello, T.A.² Chen, H.Z.³ Morkoc, H.⁴ Yariv, A.⁵

3
- 0023030425
- (1987) Nucl. Instrum. Methods B , vol.24-25 , pp. 662-666
- Yan, D.¹ Paul Farrell, J.² Lesser, P.M.S.³ Pollak, F.H.⁴ Kuech, T.F.⁵ Wolford, D.J.⁶

4
- 0004859443
- (1989) J. Appl. Cryst. , vol.22 , pp. 269-276
- Bassignana, C.¹ Tan, C.C.²

5
- 0004902550
- (1991) J. Appl. Phys. , vol.70 , pp. 4877-4881
- Chang, K.H.¹ Lee, C.P.² Wu, J.S.³ Liu, D.G.⁴ Liou, D.C.⁵ Wang, M.H.⁶ Chen, L.J.⁷ Marais, M.A.⁸

6
- 0004868563
- (1993) J. Appl. Phys. , vol.74 , pp. 5910-5912
- Lind, M.D.¹ Farley, C.W.² Sullivan, G.J.³ Grant, R.W.⁴

7
- 0031546741
- (1997) J. Cryst. Growth , vol.172 , pp. 25-36
- Bassignana, C.¹ Macquistan, D.A.² Streater, R.W.³ Hillier, G.C.⁴ Packwood, R.⁵ Moore, V.⁶

8
- 0003973002
- New York: Springer
- (1996) Optical Characterization of Epitaxial Semiconductor Layers , pp. 311
- Bauer, G.¹ Richter, W.²

9
- 0004911663
- (1976) Phys. Rev. B , vol.14 , pp. 5387-5391
- Fong, C.Y.¹ Weber, W.² Phillips, J.C.³

10
- 3643123105
- (1982) Phys. Rev. Lett. , vol.49 , pp. 1412-1415
- Mikkelsen J.C., Jr.¹ Boyce, J.B.²

11
- 0000111483
- (1997) J. Appl. Phys. , vol.81 , pp. 1683-1694
- Wasilewski, Z.R.¹ Dion, M.M.² Lockwood, D.J.³ Poole, P.⁴ Streater, R.W.⁵ SpringThorpe, A.J.⁶

12
- 0000900388
- (1999) Phys. Rev. B , vol.60 , pp. 11601-11610
- Gehrsitz, S.¹ Sigg, H.² Herres, N.³ Bachem, K.⁴ Köhler, K.⁵ Reinhart, F.K.⁶

13
- 0032651999
- (1998) J. Phys. D: Appl. Phys. , vol.32
- Germini, F.¹ Bocchi, C.² Ferrari, C.³ Franchi, S.⁴ Baraldi, A.⁵ Magnanini, R.⁶ De Salvador, D.⁷ Berti, M.⁸ Drigo, A.V.⁹

14
- 0000933996
- (1996) Phys. Rev. , vol.53 , pp. 8277-8282
- Nikulin, Yu.¹ Stevenson, A.W.² Hashizume, H.³

15
- 33646424593
- (1985) J. Appl. Phys. , vol.58
- Adachi, S.¹

16
- 0032181031
- (1998) Solid State Commun. , vol.108 , pp. 599-603
- De Caro, L.¹ Giannini, C.² Tapfer, L.³ Schönherr, H.-P.⁴ Däweritz, L.⁵ Ploog, K.H.⁶

17
- 0026837370
- (1992) IEEE Trans. Electron. Devices , vol.39 , pp. 533-536
- Broekaert, T.P.E.¹ Fonstad, C.G.²

18
- 0027617736
- (1993) Semicond. Sci. Technol. , vol.8 , pp. 1124-1125
- Demeester, P.¹ Pollentier, I.² De Dobbelaere, P.³ Brys, C.⁴ Van Daele, P.⁵

19
- 33644667395
- (1978) J. Cryst. Growth , vol.44 , pp. 518-525
- Bartels, W.J.¹ Nijman, W.²

20
- 0004884338
- (1977) J. Cryst. Growth , vol.37 , pp. 204-214
- Bartels, W.J.¹ Nijman, W.²

21
- 0004839549
- (2000) SPIE Proc. , vol.4086 , pp. 76-81
- Usher, B.F.¹ Zhou, D.²

22
- 36449004851
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2272-2274
- Tanner, B.K.¹ Turnbull, A.G.² Stanley, C.R.³ Kean, A.H.⁴ McElhinney, M.⁵

23
- 0001110138
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2269-2271
- Goorsky, M.S.¹ Kuech, T.F.² Tischler, M.A.³ Potemski, R.M.⁴

24
- 0027906436
- (1993) J. Cryst. Growth , vol.132 , pp. 427-434
- Bocchi, C.¹ Ferrari, C.² Franzosi, P.³ Bosacchi, A.⁴ Franchi, S.⁵

25
- 0004909146
- (1993) Phys. Rev. B , vol.48 , pp. 9154-9157
- Leavitt, R.P.¹ Towner, F.J.²

26
- 36449009738
- (1995) Appl. Phys. Lett. , vol.66 , pp. 682-684
- Krieger, M.¹ Sigg, H.² Herres, N.³ Bachem, K.⁴ Köhler, K.⁵

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