Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Germini, F ^a   Bocchi, C ^a   Ferrari, C ^a   Franchi, S ^a   Baraldi, A ^b   Magnanini, R ^b   De Salvador, D ^c   Berti, M ^c   Drigo, A V ^c  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM ALUMINUM ANTIMONY; VEGARD LAW VALIDITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032651999     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/303     Document Type: Article

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