X-ray reflectivity investigation of thin p-type porous silicon layers

Solid State Communications

Volumn 109, Issue 1, 1998, Pages 1-5

  Buttard, D ^a   Dolino, G ^a   Bellet, D ^a   Baumbach, T ^b   Rieutord, F ^c  

^a UNIV GRENOBLE ALPES   (France)

^b FRAUNHOFER GESELLSCHAFT   (Germany)

^c Commsrt a l'Ener Atom de Grenoble ^*  (France)

Author keywords

A. Semiconductors; B. Nanofabrications; C. X ray scattering

Indexed keywords

ANODIC OXIDATION; ELECTROMAGNETIC WAVE REFLECTION; ETCHING; INTERFACES (MATERIALS); NANOTECHNOLOGY; POROSITY; POROUS SILICON; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY ANALYSIS; X RAY SCATTERING;

X RAY REFLECTIVITY (XRR) ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0032315695     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00531-6     Document Type: Article

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