Coupling length scales for multiscale atomistics-continuum simulations: Atomistically induced stress distributions in Si/Si3N4 nanopixels

Physical Review Letters

Volumn 87, Issue 8, 2001, Pages 861041-861044

  Lidorikis, Elefterios ^b   Bachlechner, Martina E ^b   Kalia, Rajiv K ^b   Nakano, Aiichiro ^b   Vashishta, Priya ^b   Voyiadjis, George Z ^b  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CONTINUUM MECHANICS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; HAMILTONIANS; INTERPOLATION; MOLECULAR DYNAMICS; PHASE INTERFACES; STRESS CONCENTRATION;

COUPLING LENGTH SCALES; STRESS DOMAINS;

SILICON NITRIDE;

EID: 0035920757     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)